Track H
Advances in Materials and Devices Research for Digital, Neuromorphic and Unconventional Computing
Convener:
Sabina SPIGA, CNR-IMM Agrate Brianza, Italy
Members:
Marco BERNASCONI, University of Milano-Bicocca, Italy
Fernando CORINTO, Politecnico di Torino, Italy
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Yonggang HUANG, Northwestern University, USA
Daniele IELMINI, Politecnico di Milano, Italy
Asal KIAZADEH, CENIMAT, Portugal
Zdenka KUNCIC, University of Sydney, Australia
Mario LANZA, King Abdullah University of Science and Technology, Saudi Arabia
Ming LIU, Institute of Microelectronics, CAS, China
Wei D. LU, University of Michigan, Ann Arbor, USA
Mathieu LUISIER, ETH Zurich, Switzerland
Stephan MENZEL, Forschungszentrum Juelich GmbH, Germany
Thomas MIKOLAJICK, TU Dresden, Germany
Enrique MIRANDA, Universitat Autonoma de Barcelona, Spain
Yong-Young NOH, Pohang University of Science and Technology, South Korea
Beatriz NOHEDA, University of Groningen, Netherlands
Stuart PARKIN, Max Planck Institute of Microstructure Physics, Germany
Paola PRETE, CNR-IMM, Lecce, Italy
Francesco Maria PUGLISI, University of Modena and Reggio Emilia, Italy
Iuliana RADU, TSMC’s Corporate Research, Hsinchu, Taiwan
Abu SEBASTIAN, BM Research, Switzerland
Dmitri STRUKOV, University of California, Santa Barbara, USA
Aida TODRI-SANIAL, Eindhoven University of Technology, Netherlands
Rainer WASER, RWTH Aachen University, Germany
Jianhua (Joshua) YANG, University of Southern California, USA
Andrei ZENKEVICH, Moscow Institute of Physics and Technology, Russia
Sabina SPIGA, CNR-IMM Agrate Brianza, Italy
Members:
Marco BERNASCONI, University of Milano-Bicocca, Italy
Fernando CORINTO, Politecnico di Torino, Italy
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Yonggang HUANG, Northwestern University, USA
Daniele IELMINI, Politecnico di Milano, Italy
Asal KIAZADEH, CENIMAT, Portugal
Zdenka KUNCIC, University of Sydney, Australia
Mario LANZA, King Abdullah University of Science and Technology, Saudi Arabia
Ming LIU, Institute of Microelectronics, CAS, China
Wei D. LU, University of Michigan, Ann Arbor, USA
Mathieu LUISIER, ETH Zurich, Switzerland
Stephan MENZEL, Forschungszentrum Juelich GmbH, Germany
Thomas MIKOLAJICK, TU Dresden, Germany
Enrique MIRANDA, Universitat Autonoma de Barcelona, Spain
Yong-Young NOH, Pohang University of Science and Technology, South Korea
Beatriz NOHEDA, University of Groningen, Netherlands
Stuart PARKIN, Max Planck Institute of Microstructure Physics, Germany
Paola PRETE, CNR-IMM, Lecce, Italy
Francesco Maria PUGLISI, University of Modena and Reggio Emilia, Italy
Iuliana RADU, TSMC’s Corporate Research, Hsinchu, Taiwan
Abu SEBASTIAN, BM Research, Switzerland
Dmitri STRUKOV, University of California, Santa Barbara, USA
Aida TODRI-SANIAL, Eindhoven University of Technology, Netherlands
Rainer WASER, RWTH Aachen University, Germany
Jianhua (Joshua) YANG, University of Southern California, USA
Andrei ZENKEVICH, Moscow Institute of Physics and Technology, Russia
Gina ADAM, George Washington University, USA
Fernando AGUIRRE, Universitat Autonoma de Barcelona, Spain
Jaako AKOLA, Norwegian University of Science and Technology, Norway
Lambert ALFF, Technical University Darmstadt, Germany
Valeria BRAGAGLIA, IBM Research Europe, Switzerland
Sabrina CALVI, University of Rome Tor Vergata, Italy
Emanuel CARLOS, New University of Lisbon, Portugal
Umberto CELANO, Arizona State University, USA
Erika COVI, University of Groningen, Netherlands
Regina DITTMANN, Forschungszentrum Juelich GmbH, Germany
Catherine DUBOURDIEU, Helmholtz Zentrum Berlin, Germany
Paolo FANTINI, Micron Technologies Inc., Italy
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Zdenka KUNCIC, University of Sydney, Australia
Manuel LE GALLO, IBM Research Europe, Switzerland
Mathieu LUISIER, ETH Zurich, Switzerland
Stephan MENZEL, Forschungszentrum Juelich GmbH, Germany
Gianluca MILANO, INRiM, Italy
Martina MUELLER, University of Konstanz, Germany
Beatriz NOHEDA, University of Groningen, Netherlands
Paola PRETE, CNR-IMM, Italy
Bipin RAJENDRAN, King's College London, UK
Ronald TETZLAFF, TU Dresden, Germany
Wilfred VAN DER WIEL, University of Twente, Netherlands
Christian WENGER, IHP-Leibniz Institut für innovative Microelektronik, Germany
Stanley WILLIAMS, Texas A&M University, USA
Tommaso ZANOTTI, University of Modena and Reggio Emilia, Italy
Martin ZIEGLER, Technical University Ilmenau, Germany
Fernando AGUIRRE, Universitat Autonoma de Barcelona, Spain
Jaako AKOLA, Norwegian University of Science and Technology, Norway
Lambert ALFF, Technical University Darmstadt, Germany
Valeria BRAGAGLIA, IBM Research Europe, Switzerland
Sabrina CALVI, University of Rome Tor Vergata, Italy
Emanuel CARLOS, New University of Lisbon, Portugal
Umberto CELANO, Arizona State University, USA
Erika COVI, University of Groningen, Netherlands
Regina DITTMANN, Forschungszentrum Juelich GmbH, Germany
Catherine DUBOURDIEU, Helmholtz Zentrum Berlin, Germany
Paolo FANTINI, Micron Technologies Inc., Italy
Alexei GRUVERMAN, University of Nebraska-Lincoln, USA
Zdenka KUNCIC, University of Sydney, Australia
Manuel LE GALLO, IBM Research Europe, Switzerland
Mathieu LUISIER, ETH Zurich, Switzerland
Stephan MENZEL, Forschungszentrum Juelich GmbH, Germany
Gianluca MILANO, INRiM, Italy
Martina MUELLER, University of Konstanz, Germany
Beatriz NOHEDA, University of Groningen, Netherlands
Paola PRETE, CNR-IMM, Italy
Bipin RAJENDRAN, King's College London, UK
Ronald TETZLAFF, TU Dresden, Germany
Wilfred VAN DER WIEL, University of Twente, Netherlands
Christian WENGER, IHP-Leibniz Institut für innovative Microelektronik, Germany
Stanley WILLIAMS, Texas A&M University, USA
Tommaso ZANOTTI, University of Modena and Reggio Emilia, Italy
Martin ZIEGLER, Technical University Ilmenau, Germany
Enormous progress in miniaturization and in the overall performance of classical computers has been achieved during the last several years, materials and nanotechnology being at the forefront of these exploits. However , the explosion of data that need to be processed and stored, driven by the key technologies of the fourth industrial revolution such as IOT and big data, is negatively affecting the operation speed as well as the power efficiency of the whole integrated systems in von-Neumann architecture. Research on new solutions for materials and related devices is particularly active to overcome the above limits. Merging logic and memory devices in the in-memory computing, as well as developing neuromorphic architectures and exploiting unconventional computing concepts are the new paradigms underway to assist in prospective solutions.
Progress of research in materials science, related processing technologies for advanced devices, as well as modelling and simulation of materials and device properties will be object of discussion.
Progress of research in materials science, related processing technologies for advanced devices, as well as modelling and simulation of materials and device properties will be object of discussion.
Session Topics
H-1.1 Memristive materials and devices for brain inspired computing
H-1.2 Phase change materials and applications
H-2 Advances in memory and memristive devices: devices, mechanisms, and applications for computing
H-3 Neuromorphic and unconventional computing: devices, algorithms, circuits, theory
H-4 Theory, modelling and simulation of materials and devices for future computing
H-5 2D materials- and soft materials-based devices
H-6 Nanomaterials and unconventional substrates for computing
H-7 New developments in characterization methods for materials and devices